On August 17, Shaanxi Yingchen New Energy N-type TOPCon high-efficiency photovoltaic module was successfully offline, and Li Daibin, Secretary of Xixiang County Party Committee of Shaanxi Province, attended the offline ceremony of the module. Liu Dingtao, deputy general manager of Yingli Group, jointly unveiled the N-type TOPCon components. The guests who participated in the ceremony also included the county committee, the relevant departments of the county government, the main responsible comrades of the town office, the general manager of Yingchen New Energy, and the production line personnel, to witness the important achievements of Yingchen New Energy in the layout of industrial clusters in Hanzhong, Shaanxi Province.
At present, Yingchen New Energy is speeding up the layout of the national production base cluster in an all-round way. Shaanxi Yingchen New Energy Co., Ltd. is an important strategic layout of Yingli Group in the western part of China. It is compatible with the most advanced PERC process batteries, N-type TOPCON process batteries, and heterojunction HIT process batteries. It can also be compatible with the production and manufacture of green building materials BIPV photovoltaic curtain wall products, with a total of more than 70 types of compatible products. The industrial radius can radiate Shaanxi, Sichuan, northwest, southwest and other regions. It is estimated that the completed photovoltaic power station can generate 460 million degrees of clean electricity annually and reduce greenhouse gas emissions by 370,000 tons, equivalent to planting 18.8 million trees, which can promote the simultaneous improvement of economic and ecological benefits and provide a strong guarantee for the establishment of green low-carbon demonstration counties.
This off-line product is Yingchen N-type TOPCon high-efficiency photovoltaic module, which relies on the latest intelligent manufacturing technology research and development system and quality control system of Yingchen New Energy. Its mature application is 182mm silicon wafer, with multi-main gate half-chip structure, and the power of a single chip can reach 580 W. By optimizing the cell structure, material selection and process flow, higher photoelectric conversion efficiency and lower cost are achieved.